Akademik Veri Yönetim Sistemi
17th International Conference on Microscopy of Semiconducting Materials, Cambridge, Kanada, 4 - 07 Nisan 2011, cilt.326
Zinc sulfide films have been deposited on glass substrates at room temperature by the chemical bath deposition technique. The growth mechanism is studied using X-ray diffraction, scanning electron microscopy, optical absorption spectra and electrical measurements. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (100, 200, 300 400 and 500 degrees C) for 1 h. The annealed film was also characterized by structural, optical and electrical studies. The structural analyses revealed that the as-deposited film was amorphous, but after being annealed at 500 degrees C, it changed to polycrystalline. The optical band gap is direct with a value of 4.01 eV, but this value decreased to 3.74 eV with annealing temperature, except for the 500 degrees C anneal where it only decreased to 3.82 eV. The refractive index (n), extinction coefficient (k), and real (epsilon(1)) and imaginary (epsilon(2)) parts of the dielectric constant are evaluated. Raman peaks appearing at similar to 478 cm(-1), similar to 546 cm(-1), similar to 778 cm(-1) and similar to 1082 cm(-1) for the annealed film (500 degrees C) were attributed to [TOl+LA](Sigma), 2TO(Gamma), 2LO, 3LO phonons of ZnS. The electrical conductivities of both as-deposited and annealed films have been calculated to be of the order of similar to 10(-10) (Omega cm)(-1).