Physical properties of Cu2O thin films prepared by silar method
PAMUKKALE UNIVERSITY JOURNAL OF ENGINEERING SCIENCES-PAMUKKALE UNIVERSITESI MUHENDISLIK BILIMLERI DERGISI, cilt.23, sa.7, ss.854-857, 2017 (ESCI, TRDizin)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 23 Sayı: 7
- Basım Tarihi: 2017
- Doi Numarası: 10.5505/pajes.2016.58672
- Dergi Adı: PAMUKKALE UNIVERSITY JOURNAL OF ENGINEERING SCIENCES-PAMUKKALE UNIVERSITESI MUHENDISLIK BILIMLERI DERGISI
- Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), TR DİZİN (ULAKBİM)
- Sayfa Sayıları: ss.854-857
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Çukurova Üniversitesi Adresli: Evet
Özet
Polycrystalline Cu2O thin films were obtained on glass substrates using by silar method at 70 degrees C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu2O thin films UV/vis spectrophotometer was used. Optical transmittance (T%) values of the Cu2O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu20 of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (E-g) of the films were found to be 2.53-2.62 eV.