Physical properties of Cu2O thin films prepared by silar method


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ÖZASLAN D. , Gunes M., GÜMÜŞ C.

PAMUKKALE UNIVERSITY JOURNAL OF ENGINEERING SCIENCES-PAMUKKALE UNIVERSITESI MUHENDISLIK BILIMLERI DERGISI, cilt.23, ss.854-857, 2017 (ESCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 23 Konu: 7
  • Basım Tarihi: 2017
  • Doi Numarası: 10.5505/pajes.2016.58672
  • Dergi Adı: PAMUKKALE UNIVERSITY JOURNAL OF ENGINEERING SCIENCES-PAMUKKALE UNIVERSITESI MUHENDISLIK BILIMLERI DERGISI
  • Sayfa Sayısı: ss.854-857

Özet

Polycrystalline Cu2O thin films were obtained on glass substrates using by silar method at 70 degrees C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu2O thin films UV/vis spectrophotometer was used. Optical transmittance (T%) values of the Cu2O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu20 of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (E-g) of the films were found to be 2.53-2.62 eV.