DC Magnetic Properties of the Ho doped ZnO Compounds
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, cilt.26, sa.11, ss.3257-3262, 2013 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 26 Sayı: 11
- Basım Tarihi: 2013
- Doi Numarası: 10.1007/s10948-013-2135-2
- Dergi Adı: JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.3257-3262
- Anahtar Kelimeler: ZnO, Semiconductors, Magnetic hysteresis, DC susceptibility, Effective moment, THIN-FILMS, FERROMAGNETISM, TEMPERATURE, FIELD, BULK
- Çukurova Üniversitesi Adresli: Evet
Özet
In this work, we report on the DC magnetic properties of Ho doped ZnO, Zn0.8-4x Ho x O y (0.05≤x≤0.10), polycrystalline samples prepared by the so-called solid state reaction method. Magnetic measurements, M-H and M-T, done by using a PPMS magnetometer, show a paramagnetic behavior including indirect antiferromagnetic coupling between some Ho3+ magnetic moments. In other words, the negative values of the Curie-Weiss temperatures, θ, for the polycrystalline samples with six different Ho concentrations indicate that there is an effective antiferromagnetic coupling among the magnetic moments of Ho3+ ions. However, the decrease in the magnitude of θ with increasing x indicates that this coupling decreases with increasing amount of Ho in the compounds. Furthermore, the effective magnetic moments, μ eff, per Ho atom calculated from the 1/χ-T curves gradually increase with increasing concentration. Therefore, the trends of the magnitudes of θ, and μ eff values clearly indicate that apart from the antiferromagnetic coupling there is also an increasing contribution of a ferromagnetic coupling with increasing x. Hence, one may also conclude that the compounds studied seem to have a kind of spin-glass behavior.