PROPERTIES OF P-TYPE SnS THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION


GÜNERİ E., Gode F., Ulutas C., Kirmizigul F., Altindemir G., GÜMÜŞ C.

CHALCOGENIDE LETTERS, cilt.7, ss.685-694, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 7 Konu: 12
  • Basım Tarihi: 2010
  • Dergi Adı: CHALCOGENIDE LETTERS
  • Sayfa Sayısı: ss.685-694

Özet

Thin film of tin monosulfide (SnS) is deposited onto glass substrates using chemical bath deposition (CBD) at room temperature for 24 h. The structural, electrical, and optical properties of the film are determined using X-ray diffraction (XRD), energy-dispersive X-ray (EDX), scanning electron microscopy (SEM), Hall Effect measurement and spectrophometry. Obtained films were polycrystalline of an orthorhombic structure. The crystallite size, lattice parameters, defective location density, and texture coefficient of the film are calculated from the XRD data. EDX analysis revealed that thin film has a nearly stoichiometric composition (Sn/S, 54.13/45.8). From the Hall Effect measurement, it was found that SnS thin film exhibits p-type conduction. Its resistivity and mobility were calculated to be 2.53x10(5) Omega.cm and 8.99x10(5) cm(2)/V.s respectively. The activation energy is calculated to be 0.527 eV in temperature range from 353-573 K by Arrhenius equation. Optical band gap values of direct and indirect transitions are estimated to be 1.37 eV and 1.05 eV, respectively.