ELECTRONIC PROPERTIES AND SELF CONSISTENT SIMULATIONS OF CARBON NANOTUBES IN T TRANSISTOR TECHNOLOGY


AVCI M. , Yamacli S.

TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS, ss.35-72, 2010 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası:
  • Basım Tarihi: 2010
  • Dergi Adı: TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS
  • Sayfa Sayıları: ss.35-72

Özet

This chapter describes the properties of metallic and semiconducting carbon nanotubes and their self-consistent atomic simulations. In the future VLSI technology, semiconductor carbon nanotubes are expected to be used as the channel regions of the carbon nanotube field effect transistors (CNTFETs) while the metallic carbon nanotubes are to be used as the interconnects between VLSI circuit components. The advantage of the utilization of the carbon nanotubes stems from the holistic electronic transport. Current densities up to 10(9)A/cm(2) can be carried through the carbon nanotubes when the self-heating and electromigration is much less compared to conventional bulk materials.