Structural, optical, and electrical properties of Zn(1-x)MgxO nano-compounds and ZnO/Zn(1-x)MgxO heterostructures

Ercan F., Alamroo N., Ghrib T., Kayed T., ÖZÇELİK B., ERCAN İ., ...Daha Fazla

MATERIALS CHEMISTRY AND PHYSICS, cilt.290, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 290
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.matchemphys.2022.126479
  • Dergi Adı: MATERIALS CHEMISTRY AND PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Atomic and molecular structure, Magnetic properties, Electrical properties, Hall effect, ZnMgO heterostructures, MAGNESIUM-OXIDE, GROWTH, SEMICONDUCTOR, NANOPARTICLES, ZNO
  • Çukurova Üniversitesi Adresli: Evet

Özet

In this study, the structural, thermal, optical, electrical and magnetic properties of Zn(1-x)MgxO (x = 0.0, 0.1, 0.3, 0.5) nano-compounds obtained by the addition of MgO to pure ZnO nano-compounds obtained by solid state reaction were investigated in detail. These nanomaterials were deposited by spin coating technique in hetero-structure of ZnO/Zn(1-x)MgxO. It was found by detailed structure solution that the crystal systems of nano materials obtained with MgO additive remained hexagonal, but the space group was transferred from P63mc to P6/mmm. The thermal gravimetry analysis shows the stability of prepared nanomaterials, the UV-Vis spectroscopy shows that the bandgap of the prepared was decreased from 3.02 to 2.52 eV with the Mg doping percentage. The Magnetization measurements at room temperature showed that all four of these Zn(1-x)MgxO nanostructures exhibited soft ferromagnetic behavior. The analysis of the ZnO/Zn(1-x)MgxO heterostructure showed that its band gap was increased from 3.69 to 3.79 eV, its carrier density was decreased from 1.14 x 10(19) to 4.20 x 10(13 )cm(-3) which introduce it as a good material to be used in optoelectronic devices field.