A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE

GUNES M., Erken O., GÜMÜŞ C., YALAZ E., PESEN E., UKELGE M. O., ...More

PHILOSOPHICAL MAGAZINE, vol.96, no.3, pp.223-229, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 96 Issue: 3
  • Publication Date: 2016
  • Doi Number: 10.1080/14786435.2015.1122244
  • Journal Name: PHILOSOPHICAL MAGAZINE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.223-229
  • Çukurova University Affiliated: Yes

Abstract

Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral photoluminescence (PL) measurement was performed at temperatures between 15 and 300K. The PL measurements showed that band gap of the alloy decreases with increasing lattice temperature regardless the growth orientations. S-shaped temperature dependence has been observed in the samples grown on (1 0 0), (3 1 1)B, (4 1 1)B orientations. PL emission energy is fitted with Varshni and Bose-Einstein Approximation to determine Debye temperature (beta), (Theta(E)) and thermal expansion coefficient (alpha), the exciton-phonon coupling strength (a(B)).