The effect of annealing temperature on the physical properties of Cu2O thin film deposited by SILAR method

Ozaslan D., Erken O., Gunes M., Gumus C.

PHYSICA B-CONDENSED MATTER, vol.580, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 580
  • Publication Date: 2020
  • Doi Number: 10.1016/j.physb.2019.411922
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Cu2O, Annealing, CuO, SILAR, XRD, FE-SEM, SOLAR-CELL, CUO, LAYER, MORPHOLOGY, DENSITY
  • Çukurova University Affiliated: Yes

Abstract

Cu2O film was deposited on a glass substrate at 70 degrees C by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The Cu2O film was annealed in an air atmosphere at 100 degrees C, 300 degrees C, and 500 degrees C temperatures for 1 h and the effect of the annealing temperature on the physical properties was investigated. The phase-transition temperature that corresponds to the transformation from Cu2O to CuO was occurred at temperature of approximately 300 degrees C with annealing process. The energy band gap (E-g) was reduced from 2.57 eV to 1.91 eV with the increasing annealing temperature. Hall measurement revealed that the film showed p-type conductivity and the resistivity (rho) of Cu2O deposited at 70 degrees C and annealed 100 degrees C were calculated as 6.12 x 10(4) and 7.44 x 10(3 )Omega cm, respectively, while the film annealed at 300 degrees C and 500 degrees C the resistivity of CuO was found to be 8.23 x 10(3) and 5.11 x 10(2) Omega em, respectively.