9th International Physics Conference of the Balkan-Physical-Union (BPU), İstanbul, Türkiye, 24 - 27 Ağustos 2015, cilt.1722
MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 degrees C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 degrees C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E-g) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn3O4 phase after being annealed at 300 degrees C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.