Patterning sub-100nm features for submicron devices

Kavak H. , Goodberlet J.

Conference of the NATO-Advanced-Study-Institute on Nanoengineered Nanofibrous Materials, Belek-Antalya, Türkiye, 1 - 12 Eylül 2003, cilt.169, ss.529-534 identifier

  • Cilt numarası: 169
  • Basıldığı Şehir: Belek-Antalya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.529-534


Contact photolithography with an embedded amplitude conformable photomask has been used to pattern sub-100 nm features. A conformable quartz, embedded-amplitude mask is brought into intimate contact with a resist-coated substrate and exposed to 220 nm of radiation from an Xe arc lamp. Numerical simulations are used to design the photomask, which takes advantage of optical interference in the very near field. This technique offers high resolution sub-micron sized features at a low cost. A variety of useful structures can be patterned, including lines, holes and annuli. These features can be used to fabricate nanometer-scale vacuum electronic devices. Some patterned features will be presented in this paper.