Electric-field control of spin-orbit torque in a magnetically doped topological insulator


Creative Commons License

Fan Y., KOU X., Upadhyaya P., Shao Q., PAN L., LANG M., ...Daha Fazla

NATURE NANOTECHNOLOGY, cilt.11, ss.352-359, 2016 (SCI İndekslerine Giren Dergi) identifier identifier identifier

  • Cilt numarası: 11 Konu: 4
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1038/nnano.2015.294
  • Dergi Adı: NATURE NANOTECHNOLOGY
  • Sayfa Sayıları: ss.352-359

Özet

Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.