Akademik Veri Yönetim Sistemi
Physica B: Condensed Matter, cilt.733, 2026 (SCI-Expanded, Scopus)
ZnO is a widely used metal oxide semiconductor due to its environmental sustainability, abundance, and excellent optoelectronic properties. However, achieving stable p-type conductivity remains a major challenge for ZnO-based homojunction devices. In this study, fully solution-processed ZnO p-n homojunctions were fabricated on glass substrates using a spin-coating technique. The n- and p-type thin film layers were obtained by doping ZnO with In and K, respectively. Structural and optical analyses showed that 2 %wt. In-doped ZnO and 2 %wt. K-doped ZnO films preserved the hexagonal wurtzite structure and exhibited high optical transparency. Hall effect measurements confirmed p-type conductivity in K-doped films with carrier concentrations on the order of 1013–1014 cm−3. The fabricated n-ZnO:In/p-ZnO:K devices exhibited clear rectifying behavior with a turn-on voltage of ∼1.2 ± 0.04 V, n = 3.1 ± 0.1, and ΦB = 0.92 eV. These results demonstrate a simple vacuum-free route for low-cost transparent electronic devices.