Role of anionic solution temperature on the electronic, linear/nonlinear optical properties and dispersion parameters of iron (III) oxide thin films


Erken O., Sakin N., Gunes M., Ulutas C., Ozkendir O., Gumus C.

OPTICAL MATERIALS, cilt.169, ss.117607, 2026 (SCI-Expanded)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 169
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1016/j.optmat.2025.117607
  • Dergi Adı: OPTICAL MATERIALS
  • Derginin Tarandığı İndeksler: Applied Science & Technology Source, Scopus, Aerospace Database, Science Citation Index Expanded (SCI-EXPANDED), Academic Search Premier, PASCAL, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC
  • Sayfa Sayıları: ss.117607
  • Çukurova Üniversitesi Adresli: Evet

Özet

 Iron (III) oxide (Fe2O3) thin films were deposited at different anionic solution temperatures (50 ◦C, 60 ◦C, and 70 ◦C) by the Successive Ionic Layer Adsorption and Reaction (SILAR) method to investigate the electronic, structural, linear/nonlinear optical properties, and dispersion parameters of Fe2O3 thin films. The electronic structure of 3d transition metal oxides was studied by Fe K-edge X-ray Absorption Spectroscopy (XAS), revealing insights into the interplay between metal 3d electrons, ligand interactions, and the influence of local atomic environments on electronic properties. The X-ray Diffraction (XRD) analysis were performed to find out the film structure. Morphology of thin film is determined by Field Emission-Scanning Electron Microscopy (FE-SEM). The linear optical constants of Fe2O3 films were determined from UV–vis results. The optical band gap and Urbach energy values of iron oxide thin films were determined as a function of increasing anionic solution temperature. The linear and nonlinear optical parameters, such as optical density, skin depth, nonlinear refractive index, and linear optical susceptibility, were analyzed in detail. The dispersion parameters such as effective single oscillator energy, dispersion energy and optical moment of thin films were discussed by using the Single Oscillator Model of Wemple and Di-Domenico. In addition, Sellmeier’s oscillator parameter values were evaluated in detail.