The effects of the post-annealing temperature on the growth mechanism of Bi2Sr2Ca1Cu2O8+partial derivative thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)
JOURNAL OF ALLOYS AND COMPOUNDS, cilt.566, ss.175-179, 2013 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 566
- Basım Tarihi: 2013
- Doi Numarası: 10.1016/j.jallcom.2013.03.054
- Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.175-179
- Anahtar Kelimeler: Bi-2212 thin film, Pulsed laser deposition (PLD), Post-annealing, Critical current density, Superconductivity, Magnetic hysteresis, ELECTRICAL-PROPERTIES, IN-SITU, ABLATION, SUPERCONDUCTIVITY, BI2SR2CACU2O8+X, SUPERLATTICES, FABRICATION, DEPENDENCE, PHASE
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Çukurova Üniversitesi Adresli: Evet
Özet
The effects of post-annealing temperature were investigated on Bi2Sr2Ca1Cu2O8+partial derivative thin films deposited on MgO (100) substrates by pulsed laser deposition (PLD). The structural and superconducting properties of the films have been determined by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), and DC magnetization measurements. The films which were deposited at 600 degrees C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O-2 (7%), at temperature ranging between 800 and 880 degrees C. This resulted in films which exhibited a single phase of 2212 with a high crystallinity (FWHM approximate to 0.16 degrees) and texturing along the c-axis, perpendicular to the plane of the substrate. An optimum temperature of 860 degrees C was found for the post-annealing thermal treatment. The critical temperature, T-C, of the films was measured as 82 K and the critical current density, J(C), was calculated as 3 x 10(7) A/cm(2) for the film annealed at 860 degrees C.