THEORY OF EPITAXIAL-GROWTH ONTO NONPLANAR SUBSTRATES
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, cilt.10, sa.4, ss.684-690, 1992 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 10 Sayı: 4
- Basım Tarihi: 1992
- Doi Numarası: 10.1116/1.577710
- Dergi Adı: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.684-690
- Çukurova Üniversitesi Adresli: Evet
Özet
We study epitaxial growth onto a nonplanar substrate by use of phenomenological equations of motion. The substrate is chosen as a periodic sequence of mesa structures composed of well-defined crystallographic facets. Although surface diffusion is not treated explicitly, the problem is formulated at a level of sophistication sufficient to account for the atomistic kinetic processes of deposition, desorption, adatom exchange with kink sites, and interfacet migration. Numerical integration of the final kinetic equations reveals a variety of growth morphologies depending upon the relative rates of these processes. The predictions of our analysis should be amenable to direct experimental test.