Investigation of Magnetic Anisotropy in the Ni-Ge and Ni(NiO)-Ge Thin Films

KAYA D., Akyol M., Wang Y., Guo Q., KARADAĞ F., EKİCİBİL A.

JOURNAL OF MOLECULAR STRUCTURE, cilt.1230, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 1230
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.molstruc.2020.129662
  • Dergi Adı: JOURNAL OF MOLECULAR STRUCTURE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Çukurova Üniversitesi Adresli: Evet

Özet

We studied the structural and magnetic properties of Ni-Ge and Ni(NiO)-Ge films deposited by physical vapor deposition technique on the Si/SiO2 substrate. The x-ray diffraction (XRD) analysis show that as-prepared samples exhibit clear peaks of Ge, Ni, and Au with a cubic symmetry belongs to space group Fm (3) over barm. Due to the thermal annealing process at 350 degrees C, NiO layer formed on Ni layer. The NiO formation has reduced the interaction of Ni-Ge interlayer which is confirmed by XRD data. Investigation of temperature-dependent magnetic moment revealed the Neel and the critical temperatures as 93 and 294 K, respectively. The hysteresis loops showed that the preferred magnetization direction for samples at 300 K is the in-plane (parallel) which reaches saturation easier than out-of-plane (perpendicular) loops. The formation of NiGe interlayer resulted in a magnetically dead-region which led to decrease ferromagnetic domain and the coercive field. (C) 2020 Elsevier B.V. All rights reserved.