Controlling exchange bias in FeMn with Cu

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Kaya D., LAPA P. N., JAYATHILAKA P., KIRBY H., MILLER C. W., ROSHCHIN I. V.

JOURNAL OF APPLIED PHYSICS, vol.113, no.17, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 113 Issue: 17
  • Publication Date: 2013
  • Doi Number: 10.1063/1.4798310
  • Journal Name: JOURNAL OF APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Çukurova University Affiliated: No

Abstract

To study the effect of non-magnetic layer (Cu) on magnetic properties of antiferromagnetic FeMn, multilayers of Ta(5 nm)/[FeMn(t)/Cu(5 nm)]10/Ta(5 nm), where t is varied in the range of 5–15 nm, are fabricated by a combination of RF and DC magnetron sputter deposition. Magnetization curves for these samples exhibit magnetic hysteresis, and when the samples are cooled in an applied magnetic field, the hysteresis loops are shifted. This shift is attributed to an “intrinsic” exchange bias effect (i.e., it is observed without a separate ferromagnetic layer). Presented temperature and thickness dependences of the coercive field, magnetic moment, and exchange bias field provide insights into the origin and mechanism of the observed intrinsic exchange bias.

To study the effect of non-magnetic layer (Cu) on magnetic properties of antiferromagnetic FeMn, multilayers of Ta(5 nm)/[FeMn(t)/Cu(5 nm)](10)/Ta(5 nm), where t is varied in the range of 5-15 nm, are fabricated by a combination of RF and DC magnetron sputter deposition. Magnetization curves for these samples exhibit magnetic hysteresis, and when the samples are cooled in an applied magnetic field, the hysteresis loops are shifted. This shift is attributed to an "intrinsic" exchange bias effect (i.e., it is observed without a separate ferromagnetic layer). Presented temperature and thickness dependences of the coercive field, magnetic moment, and exchange bias field provide insights into the origin and mechanism of the observed intrinsic exchange bias. (C) 2013 American Institute of Physics.