The effects of the post-annealing time on the growth mechanism of Bi(2)Sr(2)CalCu(2)O(8-partial derivative) thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

Creative Commons License

Nane O., ÖZÇELİK B. , Abukay D.

CERAMICS INTERNATIONAL, cilt.42, sa.5, ss.5778-5784, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Konu: 5
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.ceramint.2015.12.116
  • Sayfa Sayıları: ss.5778-5784


Bi(2)Sr(2)CalCu(2)O(8+partial derivative) thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), atomic force microscopy (AFM), and DC magnetization measurements. The films deposited at 600 degrees C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O-2 (7%), at 860 degrees C for 10, 30, and 60 min. All films have demonstrated a mainly single phase of 2212 with a high crystallinity (FWHM approximate to 0.159 degrees) and c-axis oriented. The critical temperature, T-C, of the films annealed for 10, 30, and 60 min were obtained as 77, 78, and 78 K, respectively. The highest critical current density, J(C), was calculated as 3.34 x 10(7) A/cm(2) for the film annealed at 860 degrees C for 30 min at 10 K. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.