Cu2O thin films prepared by using four different copper salts at a low temperature: An investigation of their physical properties


Altindemir G., Gumus C.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.107, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 107
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.mssp.2019.104805
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Özet

In this study, cuprous oxide (Cu2O) films were prepared using four different copper salt ((CH3COO)(2)Cu center dot H2O, CuSO4 center dot 5H(2)O, Cu(NO3)(2)center dot 3H(2)O, and CuCl2 center dot 2H(2)O) with the SILAR method at a low temperature (60 degrees C) on a glass substrate with 40 immersion cycles. The structural, optical, morphological and electrical properties of the films were investigated. In the X-ray diffraction (XRD) analysis, it was found that Cu2O thin films were polycrystalline, and there were no great differences between the structural properties of the films. The optical properties of the Cu2O thin film were analyzed by absorption spectrum results. As the thickness value of the Cu2O thin films increased, the energy band gap values decreased. In the FE-SEM (Field Emission-Scanning Electron Microscope) images, it was seen that spherical agglomeration generally occurred in the films, and, in some films, there were rod-structured particles in spherical form. In the Hall measurements, Cu2O thin films were found to have p-type electrical conductivity, and the electrical resistivity values of the films (rho) were found to be 1.24 x 10(4), 4.06 x 10(4), 2.86 x 10(3), and 1.67 x 10(4) Omega cm, respectively. The mobility values (mu) of the films were found to be 174, 87, 80, and 23 cm(2)/V, respectively.