Effect of water treatment on transparent semiconductor InZnSnO thin films

Moon J. C., Aksoy F., Ju H., Liu Z., Mun B. S.

CURRENT APPLIED PHYSICS, vol.11, no.3, pp.513-516, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 3
  • Publication Date: 2011
  • Doi Number: 10.1016/j.cap.2010.09.004
  • Journal Name: CURRENT APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.513-516
  • Çukurova University Affiliated: No

Abstract

The effects of water exposure on InZnSnO transparent thin films are reported. After the immersion of InZnSnO films under de-ionized water, an enrichment of In (and Sn) and a reduction of Zn are found on the surface, probed with X-ray photoelectron spectroscopy (XPS). In addition, O 1s core-level XPS spectra show a presence of hydroxyl after the water immersion process, supporting that the adsorption of H2O to InZnSnO surface may induces partial negative charge to surface with either molecular to hydroxyl forms. (C) 2010 Elsevier B.V. All rights reserved.