Structural properties of CdSe corn-like nanowires grown by chemical bath deposition

METİN GÜBÜR H., Septekin F., ALPDOĞAN S., Sahan B., Zeyrek B. K.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.27, ss.7640-7645, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 27 Konu: 7
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1007/s10854-016-4748-2
  • Sayfa Sayıları: ss.7640-7645


The Cadmium Selenide (CdSe) nanowire thin films were prepared on glass substrates by chemical bath deposition at 70 A degrees C. The CdSe nanowire film was annealed in an air atmosphere at 100, 200, 300, 400 and 500 A degrees C for 1 h. Corn-like nanowires structure was observed when the CdSe nanowire films were annealed in air atmosphere at 300, 400 and 500 A degrees C. Scanning electron microscope indicated that the CdSe nanowires and corn-like nanowires have a diameter of about 53.0-327.0 nm while their length is about 0.75-5.0 mu m. The surface particles of the corn-like nanowires have a diameter of around 30-50 nm. X-ray diffraction results showed that these films have a mixed phase of cubic and hexagonal. The optical properties of the as-deposited and annealed films were investigated by recording the transmission spectra by using UV-visible spectrophotometer. It has been observed that the energy band gap decreased upon annealing (from 1.81 to 1.40 eV). The electrical measurements (resistivity, carrier concentration and mobility) of the CdSe films were carried out using of Hall Effect at room temperatures.