Accurate SPICE compatible CNT interconnect and CNTFET models for circuit design and simulation

Yamacli S., Avci M.

MATHEMATICAL AND COMPUTER MODELLING, cilt.58, ss.368-378, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 58
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.mcm.2012.11.014
  • Dergi Adı: MATHEMATICAL AND COMPUTER MODELLING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.368-378
  • Anahtar Kelimeler: CNT interconnect, CNTFET, Semiconductor device modelling, SPICE, FIELD-EFFECT TRANSISTORS, INCLUDING NONIDEALITIES, CARBON, ELECTRON
  • Çukurova Üniversitesi Adresli: Evet

Özet

SPICE compatible CNT interconnect and CNTFET models in Verilog-A hardware description language are presented in this paper. Metallic CNTs are shown to have current saturation characteristics above a threshold voltage and then modelled with piecewise linear functions. On the other hand, the CNTFET model developed utilizes the calculation of the self-consistent potential of the CNT channel depending on gate and drain voltages. Unlike the previous SPICE-enabled CNTFET models using approximations and curve fittings, the proposed model employs a self-consistent method for the calculation of the channel potential in SPICE, providing more accuracy. The versatility of the CNT interconnect model and that of the CNTFET model are shown in CNT circuit simulations. (C) 2012 Elsevier Ltd. All rights reserved.