5th International Mediterranean Science and Engineering Congress (IMSEC 2020), Antalya, Türkiye, 21 - 23 Ekim 2020, no.337, ss.753-755
Silicon on insulator (SOI) MOSFETs has several advantages over bulk transistors. In this study, structural design and numerical simulations of an n-channel SOI transistor are presented. Th device has a 0.7 µm channel length and 0.017 µm gate oxide thickness. All the simulations are performed using Silvaco software tools, and characteristic curves of the presented device are obtained.