PROBING THE TEMPERATURE-DEPENDENCE OF THE DYSPROSIUM-SILICON INTERFACE


UFUKTEPE Y.

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, cilt.14, ss.457-462, 1992 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 14 Konu: 5
  • Basım Tarihi: 1992
  • Doi Numarası: 10.1007/bf02457035
  • Dergi Adı: NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS
  • Sayfa Sayıları: ss.457-462

Özet

Photoemission electron spectroscopic measurements were done on the Dy-Si interfaces prepared by Dv deposition onto cleaved Si(111) surface with the use of synchrotron radiation as a light source. Results show that an interfacial reaction takes place even at room temperature. Temperature dependence studies for Dy deposited on Si(111) demonstrate the importance of overlayer thickness and substrate temperature during deposition.