PROBING THE TEMPERATURE-DEPENDENCE OF THE DYSPROSIUM-SILICON INTERFACE


UFUKTEPE Y.

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, vol.14, no.5, pp.457-462, 1992 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 14 Issue: 5
  • Publication Date: 1992
  • Doi Number: 10.1007/bf02457035
  • Title of Journal : NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS
  • Page Numbers: pp.457-462

Abstract

Photoemission electron spectroscopic measurements were done on the Dy-Si interfaces prepared by Dv deposition onto cleaved Si(111) surface with the use of synchrotron radiation as a light source. Results show that an interfacial reaction takes place even at room temperature. Temperature dependence studies for Dy deposited on Si(111) demonstrate the importance of overlayer thickness and substrate temperature during deposition.