PROBING THE TEMPERATURE-DEPENDENCE OF THE DYSPROSIUM-SILICON INTERFACE

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Atıf İçin Kopyala

UFUKTEPE Y.

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, cilt.14, sa.5, ss.457-462, 1992 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 14 Sayı: 5
• Basım Tarihi: 1992
• Doi Numarası: 10.1007/bf02457035
• Dergi Adı: NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.457-462
• Çukurova Üniversitesi Adresli: Evet

Özet

Photoemission electron spectroscopic measurements were done on the Dy-Si interfaces prepared by Dv deposition onto cleaved Si(111) surface with the use of synchrotron radiation as a light source. Results show that an interfacial reaction takes place even at room temperature. Temperature dependence studies for Dy deposited on Si(111) demonstrate the importance of overlayer thickness and substrate temperature during deposition.