Akademik Veri Yönetim Sistemi
Ceramics International, 2026 (SCI-Expanded, Scopus)
In this study, Cu2O thin films were deposited on indium tin oxide (ITO) substrates at 60 °C, using the different copper precursor salts [copper (II) acetate, copper (II) sulfate, copper (II) nitrate, copper (II) chloride] by the Electrochemical Deposition (ECD) method. The structural, morphological, optical, and electrical properties of Cu2O thin films were deeply investigated by comparing the performance of the copper salts. X-ray diffraction (XRD) analyses showed that all Cu2O thin films crystallized in a cubic structure and in the cuprite phase. It was observed that the Cu2O thin film deposited with copper (II) sulfate salt exhibited a better crystal structure compared to other salts. Field Emission Scanning Electron Microscopy (FE-SEM) images showed that the thin films generally exhibited a homogeneous distribution of crystals. The most successful results in terms of morphological quality were also obtained with copper (II) sulfate. Atomic Force Microscopy (AFM) analyses revealed that the lowest surface roughness values (Ra = 2.49 nm, Rq = 3.08 nm) were obtained from the Cu2O thin films deposited with copper (II) sulfate. The energy band gap (Eg) values of Cu2O thin films deposited with copper acetate, copper sulfate, copper nitrate, and copper chloride precursor salts were found to be 2.54 eV, 2.49 eV, 2.52 eV, and 2.59 eV, respectively. Hall measurements of Cu2O thin films deposited with copper acetate, copper sulfate, copper nitrate, and copper chloride precursor salts revealed that they showed p-type electrical resistivity and mobility values of 5.32 × 103, 1.18 × 104, 2.87 × 103, 8.58 × 103 Ωcm, 103, 128, 108, 51.5 cm2/Vs, respectively.