Influences of copper and manganese concentrations on the properties of polycrystalline ZnS:Cu and ZnS:Mn thin films

Gode F., GÜMÜŞ C.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.11, sa.4, ss.429-436, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 4
  • Basım Tarihi: 2009
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.429-436
  • Anahtar Kelimeler: ZnS:Cu, ZnS:Mn, Thin films, XRD, Optical absorption, THERMAL-OXIDATION, ELECTRICAL-CONDUCTIVITY, PHYSICAL-PROPERTIES, PHOTOLUMINESCENCE, NANOCRYSTALS, DEPOSITION, OXIDE, CU, LUMINESCENCE, RANGE
  • Çukurova Üniversitesi Adresli: Hayır

Özet

Copper and manganese doped zinc sulfide (ZnS-Cu and ZnS:Mn) thin films are deposited on glass substrates using chemical bath deposition (CBD) method, with the both copper and manganese concentration varying from 0.5 to 4 mol%. All films were annealed in the temperature range of 100-500 degrees C and characterized by X-ray diffraction (XRD) and optical absorption. All samples are shown to be crystallized in the hexagonal phase of ZnS with a preferential orientation in the (008) direction. The XRD analysis showed that after annealing process, ZnS:Cu and ZnS:Mn films can be converted to ZnO:Cu and ZnO:Mn films at annealing temperature of 300 degrees C. The electrical conductivity measurments were taken in the dark before and after annealing temperature of 400 degrees C for 1 h. The electrical conductivity of ZnS:Cu films decreased after annealing process. However, it increased for ZnS:Mn thin films. The activation energy values were obtained using the temperature-dependent current measurements in the range of 300-623 K.