The effects of the post-annealing time on the growth mechanism of Bi(2)Sr(2)CalCu(2)O(8-partial derivative) thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)


Creative Commons License

Nane O., ÖZÇELİK B., Abukay D.

CERAMICS INTERNATIONAL, vol.42, no.5, pp.5778-5784, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 42 Issue: 5
  • Publication Date: 2016
  • Doi Number: 10.1016/j.ceramint.2015.12.116
  • Journal Name: CERAMICS INTERNATIONAL
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.5778-5784
  • Keywords: Superconductivity, Bi-2212 thin film, Pulsed laser deposition (PLD), Post-annealing, Critical current density, IN-SITU, SUPERCONDUCTING PROPERTIES, BI2SR2CACU2O8+X, SUPERLATTICES, ABLATION, PHASE
  • Çukurova University Affiliated: Yes

Abstract

Bi(2)Sr(2)CalCu(2)O(8+partial derivative) thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), atomic force microscopy (AFM), and DC magnetization measurements. The films deposited at 600 degrees C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O-2 (7%), at 860 degrees C for 10, 30, and 60 min. All films have demonstrated a mainly single phase of 2212 with a high crystallinity (FWHM approximate to 0.159 degrees) and c-axis oriented. The critical temperature, T-C, of the films annealed for 10, 30, and 60 min were obtained as 77, 78, and 78 K, respectively. The highest critical current density, J(C), was calculated as 3.34 x 10(7) A/cm(2) for the film annealed at 860 degrees C for 30 min at 10 K. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.